伞海生

研究领域：MEMS传感器、射频MEMS器件、微光机电系统及器件、微能源器件及系统、微波光电子、光纤光学、材料物理等。

教学领域：机电工程、测控技术、物理科学与应用

简历：1993年毕业于西南科技大学，获机械制造专业工学学士学位。同年在甘肃建筑材料工业学校任教。

2001年在兰州大学物理科学与技术学院攻读硕士学位。

2004年在中科院半导体所攻读博士学位（与兰州大学联合培养）。

2006年博士毕业，获材料物理专业工学博士学位。同年到厦门大学物理机电学院从事博士后研究，

2008年出站并留校任教。迄今为止发表文章28篇，其中SCI收录11篇，EI收录17篇，申请专利4项。

主要研究成果

1. Hai-sheng San, Xu-yuan Chen, Peng Xu, Gang Li, Lin-xian Zhan, “Using metal-insulator-semiconductor structure to investigate dielectric charging in capacitive RF MEMS switches”, Applied Physics Letter, Vol.93, 063506, 2008.Slected for the August 25, 2008 issue of Virtual Journal of Nanoscale Science & Technology.

2. Haisheng San, Lin Li, Gang Li, Xuyuan Chen, Boxue Feng, “Frequency response measurement of high-speed photodetectors using the spectrum power method in a delay self-heterodyne system”, Appl. Phys. B, Vol.88, pp.411-415, 2007

3. Haisheng San, Gang Li, Xuyuan Chen, “Control of Dielectrics Charging and Discharging in Capacitive RF MEMS Switches”, Accepted by IEEE Trans. Electron Devices.

4. Haisheng San, Bin Li, Boxue Feng, Yuyang He, Chong Chen, “Point-defects-induced band edge displacements and band-gap narrowing in CdIn2O4thin films”, Thin Solid Films, Vol.483, pp 245-250, 2005.

5. San Haisheng, Chen Chong, He Yuyang, et al., “Study on electrical properties of n-type transparent and conductive Cdln2O4thin film and the optimum preparation parameters for large-area film”, ACTA PHYSICA SINICA, Vol. 54 (4): 1736-1741, Apr 2005.

6. San Haisheng, Li Bin L, Feng Boxue, et al., “Effect on optical band-gap of transparent and conductive Cdln2O4thin film due to defects-induced Burstein-Moss and band-gap narrowing characteristics”, ACTA PHYSICA SINICA, Vol. 54 (2): 842-847, Feb 2005.

7. Haisheng San, Jimin Wen, Liang Xie, Ninghua Zhu, Boxue Feng, “High-Speed Photodetector Characterization Using Tunable Laser by Optical Heterodyne Technique”, Proc. of SPIE, Vol. 6020, pp 60200A, 2005.(Invited paper)

8. Hai-sheng San, Xu-yuan Chen, Peng Xu,Fang-qiang. Li, Mei-Ying Cheng, “A MEMS-based infrared array emitter for combat identification”, Proc. of SPIE Vol. 6940, 69401T, (2008)

申请专利

1. 微波光子晶体在高速光电子器件封装中的应用，发明专利申请号：200510055278 ,公开号：1835308 (已授权)

2. 具有微波光子晶体结构接地层的高速印刷电路板, 发明专利申请号：200510011210.1

3. 一种微电子机械红外光源及其制备方法，发明专利申请号：200810070672.4

4. 复合型微能源系统及其制备方法，国家发明专利申请号：200810070682.4